Coccolit - Radiolaria, imaged at 3 kV with lower verhart Thornley detector.

In-lens EsB image from a compound of Bi2Ca2Co1. The image taken with the EsB detector shows independent from topography the compositional contrast generated by the various materials.

In-lens SE image of a carbon nanotube. With a significantly larger length-to-diameter ratio than any other materials up to 28,000,000:1, imaging of a carbon nanotube is an extremely challenging task. The optimized setup of the MERLIN™ system regarding vibration reduction for high resolution imaging combined with highest ease of use gives even novice users the possibility to achieve expert results.

Silicon - The integrated complete detection system within MERLIN™ is the optimized solution for imaging of semiconductor samples. The images show the topographical information of a silicon device imaged with the in-lens SE detector.

Tobacco leaf - The MERLIN™ system can be equipped with different additional options for cryo applications. Image shows a cryo fracture of a tobacco leaf imaged at 2.6 kV with in-lens SE detector.

Poly - The integrated complete detection system within MERLIN™ is the optimized solution for imaging of semiconductor samples. The images show the topographical information the crystalline structure of a silicon device imaged with the AsB detector.

Uncoated fly, imaged at 7.5 kV with local charge compensation, enabling the imaging of non-conductive samples without prior preparation.

Gate Poly - Nanometer-scale structuring by direct ion beam writing, e.g. for atom probe tips. The image shows a very sharp Si tip (radius < 20 nm) trimmed from Si posts which were fabricated by reactive ion etching.

Axon Myelin - STEM bright field image of unstained myelin recorded at 30 kV acceleration voltage. Image shows unparalleled high contrast of the 4 nm axon layers.

The integrated complete detection system within MERLIN™ is the optimized solution for imaging of semiconductor samples. The images show the material contrast information of a tungsten plug analyzed with the in-lens EsB detector .

Silicon - The new MERLIN™ chamber is constructed for enabling the integration of a maximum of analytical investigations methods like EDX, EBSD, WDX etc. As an example, the images show an electron backscattered diffraction image (EBSD) which can be used to elucidate texture or preferred orientation of any crystalline or polycrystalline materials.

In-lens SE detector for topographical information. The image shows a sectioned semiconductor. By design, the in-lens SE detector collects pure secondary electrons. Low energy secondary electrons originate only from the surface region.

EsB detector for material contrast information The image shows the same sectioned semiconductor. By design, the higher energy backscatter electrons are detected with the in-lens EsB detector.

Material analysis of an airplane turbine. In-lens SE image showing different material components. Courtesy of Dr. Penkalla, Research Center Juelich, Germany.

Fastest EDX mappings showing detailed material contributions of different regions of the background image. Courtesy of Dr. Penkalla, Research Center Juelich, Germany.

Mouse Brain - High resolution large area (16 k x 16 k pixels) backscatter image of a slice of a mouse brain. Imaged in a SIGMA VE system with Fibics scan generator. Building upon this success, the MERLIN™ further extends this capability with superb resolution and image acquisition speed. Courtesy of Dr. Jeff Lichtman and Colleagues, Harvard University.