auriga_KV CrossBeam® Workstations
The AURIGA® Technology
AURIGA_CrossBeamConcept CrossBeam® Concept
AURIGA_GEMINI Electron Optics GEMINI® Electron Optics
AURIGA_GEMINITechnology Unique Technology
Local Charge Compensation
EsB Backscatter Electron Detection
Unique Technology
Local Charge Compensation

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Fast change between local charge compensation and high vacuum operation is guaranteed by a simple pneumatic retraction mechanism for the gas injection system.
AURIGA_UniqueTechnology_2a Fast change between local charge compensation and high vacuum operation is guaranteed by a simple pneumatic retraction mechanism for the gas injection system.
AURIGA_UniqueTechnology_2b SE and BSE emitted from the sample
surface ionize the gas molecules. As the resulting positive ions (dark green) hit the sample surface it is neutralized. Full imaging and analytical capabilities are thus enabled.
Imaging and analysis of charging samples
The local charge compensator is essential to ensure maximum information gain for insulating materials. This system enables convenient SEM imaging across the entire range of acceleration voltages, better milling results by suppressing FIB-deflections, superior high kV analytics, such as EDS or EBSD, with no information loss, as well as the use of all standard detectors.
The design of the local charge compensation system is based on a gas which is locally injected to the area of interest and ionized by collisions with charged particles.This ionisation results in the desired removal of specimen charging.


EsB Backscatter Electron Detection

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Filtering grid technology for maximum compositional contrast information. The filtering rejects secondary electrons and only the backscattered electrons pass
through to the upper EsB detector.
Online compositional information
Acquiring data about sample composition by direct imaging provides a quick and easy way to obtain material information. The GEMINI® column features the so called Energy and Angle Selective EsB detector that allows an almost pure compositional image to be obtained by filtering out unwanted surface information.
This compositional information is extracted by blocking secondary electrons from the EsB detector by a negatively biased filtering grid.

Signal mixing
The possibility of adjusting the filtering strength of the EsB detector and the simultaneous acquisition of secondary electrons by the in-lens and chamber mounted SE detectors enables optimum real-time signal mixing.
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