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Advanced Mask Qualification for all
Litho Techniques at 32 nm node |
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AIMS™ 32-193i meets the stringent requirements for advanced photomask evaluation for the 32 nm node of ArF lithography.
Main system improvements include interferometric stage technology to achieve further accuracy in mask positioning, a highly flexible illumination system to emulate all kinds of 193 nm lithography illumination requirements and the LITO™ grade optics with scanner-like imaging performance.
For the first time in AIMS™ history variable transmission in the illumination pupil is now available with AIMS™ 32-193i. The illumination schemes can be flexibly adjusted to different intensity distributions within the pupil.
Thus, the AIMS™ 32-193i enables accurate mask defect disposition and repair qualification for 32 nm masks and ensures the introduction of upcoming lithography technologies such as Double Patterning, Computational Lithography (Inverse Litho Technology) and Source Mask Optimization (SMO).
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