Lithography
248nm, 193nm , 157nm, EUV, EPL, LEEPL
Node
90nm / 65nm and beyond
Sample
6" mask
Repair Application
Chrome, TaN, MoSi, SiC, Si- etching,
Pt/C deposition, other materials upon request
Repair function
Polygon shape, Scan rotation, Pattern copy,
Real-time imaging of deposition and etching
Repair Accuracy
Currently 15nm @ 3 sigma (4 x mask),
target 7nm (pattern copy and placement function)
Minimum Repairable Defect
< 50nm
Resistance to chemicals
resistant to standard cleaning agents
Link with inspection tool
KLA file format, and others supported
Options
8" wafer capability, variable pressure chamber,
Loader adaptation
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