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In the area of Photomask Technologies
Carl Zeiss SMS is pleased to share with you the following list of recent technical publications that give you detailed information on our advanced mask products.
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| PUBLICATIONS 2011 | | |
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| European Mask and Lithography Conference (EMLC) 2011 | | |
| The evolution of pattern placement metrology for mask making | | |
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| PUBLICATIONS 2010 | | |
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| SPIE / BACUS Photomask Conference 2010 | | |
| Improving registration metrology by correlation methods based on alias-free image simulation | | |
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| Impact of New MoSi Mask Compositions on Processing and Repair | | |
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| Process Window improvement on 45 nm technology Non Volatile Memory by CD uniformity improvement Carl Zeiss SMS Germany / Israel, Numonyx, Italy | |
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| EUV mask stack optimization for enhanced imaging performance ASML Netherlands / Belgium, Carl Zeiss SMS Jena | |
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| Photomask Japan Conference 2010 | |
| PROVE, the next generation registration metrology tool, status report, Carl Zeiss SMS, SEMATECH, Carl Zeiss SMT AG | |
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| Increased Productivity of Repair Verification by Offline Analysis of Aerial Images, DNP Photomask Europe / Italy, Carl Zeiss SMS/ Germany | |
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SPIE Advanced Lithography 2010 | |
| Improved CD control for 45/40nm CMOS logic patterning - Anticipation for 32/28nm , ST Microelectronics France, Carl Zeiss SMS Germany /Israel | |
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| Reducing the impact of reticle CD-non-uniformity of multiple
structures by dose corrections based on aerial image measurements, Carl Zeiss SMS Germany, ASML Netherlands | | |
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| CD Uniformity correction on 45 nm technology Non Volatile Memory Carl Zeiss SMS Germany / Israel, DPE Italy, Numonyx Italy | | |
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| Actinic Review of EUV Masks, Carl Zeiss SMT AG Germany, Carl Zeiss SMS Germany | | |
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| Intra Field CD Uniformity Correction by Scanner Dose Mapper using Galileo® Mask Transmission Mapping as the CDU Data Source, Globalfoundries Singapore, Carl Zeiss SMS | | |
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| European Mask & Lithography Conference 2010 | | |
| E-beam induced EUV photomask repair – a perfect match | | |
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BACUS Photomask Conference 2009
Expanding The Lithography Process Window With CDC Technology
Challenging defect repair techniques for maximizing mask repair yield
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| Photomask Japan Conference 2009
Semi-Automated Repair Verification of Aerial Images
Phase behavior through pitch and duty cycle and its impact on process, Carl Zeiss SMS/ Germany, IMEC/ Belgium
Calibration strategies for precision stages in state-of-the-art registration metrology
SPIE Advanced Lithography Conference 2009
Investigation of phase distribution using Phame® in-die phase measurements
WLCD: A new System for Wafer Level CD Metrology on Photomasks
Application of Pixel-based Mask Optimization Technique for High Transmission Attenuated PSM
Mentor Graphics Corp., IMEC, Carl Zeiss SMS
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| European Mask and Lithography Conference EMLC 2009
Monte-Carlo Simulations of Image Analysis for flexible and high resolution in-die metrology
MeRiT repair verification using in-die phase metrology Phame
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| Publications 2008 |
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SPIE / BACUS Photomask Conference 2008
Advanced process capabilities for e-beam based photomask repair in production environment
AIMS and Resist Simulation
Photomask registration and overlay by means of 193nm optics
Detection of progressive transmission loss due to haze with Galileo mask DUV transmittance mapping based on non imaging optics
Photomask Japan Conference 2008
Wafer Level CD Metrology on Photomasks using Aerial Imaging Technology
Phame® - phase measurements on 45nm node phase shift features
Increasing the Predictability of AIMS Measurements by Coupling to Resist Simulations, Fraunhofer-Institute of Integrated Systems and Device Technology (IISB), Erlangen, Carl Zeiss SMS GmbH, Jena, IMEC, Leuven, Belgium
SPIE Advanced Lithography Conference 2008
Phase metrology on 45-nm node phase-shift mask structures
Intel Mask Operation, Santa Clara / USA, Carl Zeiss SMS, Jena, Germany
The Flash Memory battle: How low can we go?
ASML, Veldhoven, Netherlands, ASML, Santa Clara, USA, Carl Zeiss SMS Jena, Germany
Hyper-NA imaging of 45nm node random CH layouts using inverse lithography IMEC, Leuven, Belgium, Mentor Graphics, Wilsonville, USA, Rochester Institute of Technology, Rochester, USA
European Mask and Lithography Conference 2008
Phame® - high resolution off-axis phase shift measurements on 45nm node features
Characterizing the imaging performance of Flash Memory masks using AIMS, ASML, Netherlands, Carl Zeiss SMS, Germany
High-resolution and high-precision pattern placement metrology for the 45 nm node and beyond
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SPIE/ BACUS Photomask Conference 2007
Laterally resolved off-axis phase measurements on 45nm node production features using Phame
Carl Zeiss SMS/Germany, Intel/USA
Using the AIMS 45-193i for hyper NA imaging applications
IMEC/Belgium, Carl Zeiss SMS/Germany
Mask CD Control (CDC) with ultrafast Laser for improving mask CDU using AIMS as the CD metrology data source
Pixer Corp./Israel, Carl Zeiss SMS/Germany
Performance Comparison of techniques for intra-field CD control imrovement
Quimonda, Pixer Technology Ltd., AMTC
PMJ Photomask Japan Conference 2007
Novel solution for in-die phase control under scanner equivalent optical settings for 45nm node and below
This paper was awarded with the Best Paper Award from PMJ!
Automated aerial image based CD metrology initiated by pattern marking with photomask layout data
SPIE Advanced Lithography Conference 2007
Study of rigorous effects and polarization
on phase-shifting masks through simulations and in-die phase measurements
Phame: a novel phase metrology tool of Carl Zeiss
for in-die phase measurements under scanner relevant optical settings
Pupil plane analysis on AIMS 45-193i
for advanced photomasks
EMLC 2007
Investigation of hyper-NA scanner emulation
for photomask CDU performance
Programmed defects study on masks
for 45nm immersion lithography using the novel AIMS 45-193i
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