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| Blur of latent image due to resist development process can be directly calculated from the AIMS image | Derivate resist process impact from already existing information |
| AIMS Resist Emulator considers resist contribution to MEEF | AIMS analysis increases sensitivity to defects |
| Easy to calibrate | Tailored for the use in mask shops |
Integrated into well-known
AIMS user interface by the ZEISS proprietary “Effective Resist Plot” | Intuitive use of all AIMS analysis functions like CD vs. Threshold, Process Window etc. |
| Short calculation time of < 1min. | Fast information with high throughput |
| Off-line analysis | Allows for the usage of different resist parameters on the same AIMS image data set |