Electron beam induced chemical reactions are exploited for etching and deposition of mask material. A suitable precursor gas is dispensed through a nozzle near to the focused electron beam. The precursor gas molecules adsorb at the substrate surface, and a reaction is induced by the electron beam.
Etching is realized by a reaction between the precursor gas and the substrate materials resulting only in volatile by-products.
Deposition is realized by a fragmentation of different precursor gas molecules, again all the by-products are completely volatile. These processes allow the successful application in a production environment.
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| Deposition of dedicated material | Etching of dispensable material |
|  Benefits
Principle
Software
System Setup
Technical Data |