- Superior resolution and accuracy for repair
- Repair process causes no transmission loss and no contamination
- No mask structure modfication generated during imaging allowing for degradation-free review cycles
- End-point definition through e-beam induced chemical reactions without any sputter contribution
- High imaging signal-to-noise ratio results in better overall system performance
- Multi-node-capability down to 45nm node
- All-in-one-tool minimising process overhead
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| SEM image of defective lines & spaces structure | SEM image of repaired mask structure |
AIMS image of defective lines & spaces | 
Printability check by AIMS of repaired mask |
 top |  Benefits
Principle
Software
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Technical Data
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