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| Metrology |
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Phame®
High resolution Photomask Phase Metrology system enabling in-die phase measurement for 193nm lithography. |
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WLCD32
Wafer-level CD Metrology System for Photomasks based on proven aerial imaging technology, measuring in-die features |
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As the lithography process moves toward the 45nm and 32nm nodes, phase control on the mask is becoming more important than ever. To ensure an accurate printing, both attenuated and alternating phase shift masks (PSMs) need precise control of the phase shift as a function of both pitch and target sizes. Simulations show that the phase shift in the image plane of a microlithography scanner is strongly affected by numerical aperture (NA), mask pitch, 3D mask effects, and polarization, especially if the feature sizes come close to the imaging wavelength. The new phase metrology system Phame overcomes the limitations of currently existing tools and meets these new requirements. | |
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