| Features | Benefits |
| NA up to 1.6 | Phase-shift measurements for today's and future Phase-Shift Masks enabling process control down to 32 nm |
| Illumination under varying angle of incidence | On-axis and off-axis illumination as required for PSM types like AA-PSM, EA-PSM, CPL |
| Measurement capability | Large test features, In-die production features |
| Polarization | Investigation of polarization effects |
| Pellicle capability | Through pellicle measurements |
| Large reference feature measurement | Covering the capability of interferometer based methods with high reproducibility |
| In-die phase measurement | Capturing diffraction limitation by NA and pitch and rigorous 3D mask effects |
| High phase reproducibility | Large features: 3 sigma < 0.2°
Small features: 3 sigma < 0.4° |
| High transmission reproducibility | Large features: 3 sigma < 0.1%
Small features: 3 sigma < 0.1% |
| Operator GUI | Operator production use |
| SMIF option | Supporting high end production processes
Fulfilling high cleanliness requirements for 45 nm / 32 nm mask production |
| SECS/GEM option | Integration into the host communication system of a mask shop, host control |